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三星电子半导体部门日前宣布,该公司研发人员运用60纳米芯片工艺成功开发容量高达8GB的NAND闪存芯片。三星表示,高容量NAND闪存芯片的成功开发,使16GB集成芯片的制作成为可能,而16GB集成芯片可一次储存16个小时的相当于DVD画面水平的影像资料。
Samsung Semiconductor recently announced that the company’s R & D personnel successfully developed NAND flash memory chips with capacity of up to 8GB using 60nm chip technology. Samsung said the successful development of high-capacity NAND flash memory chips makes the production of 16GB integrated chips possible, while the 16GB integrated chip can store 16 hours of image data equivalent to the DVD picture level at a time.