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SI—GaAs(半绝缘砷化镓)材料是研制GaAs VHSIC((超高速集成电路)和MMIC(单片微波集成电路)的重要的衬底材料,SI—GaAs晶片的质量对GaAs集成电路的性能和成品率有很重要的影响。 离子注入掺杂(在SI—GaAs中形成有源层、欧姆接触层、电阻层等),是制造GaAs集成电路的关键工艺。由于GaAs(具有一定极性的Ⅲ—Ⅴ族化合物半导体)与Si(非极
SI-GaAs (semi-insulating gallium arsenide) material is an important substrate material for the development of GaAs VHSIC (ultra-high speed integrated circuits) and MMICs (monolithic microwave integrated circuits). The quality of SI-GaAs wafers affects the performance of GaAs integrated circuits And yield have a very important impact.Ion doping (the formation of active layer in the SI-GaAs, ohmic contact layer, the resistance layer, etc.), is the key process for the manufacture of GaAs integrated circuits.As GaAs (with a certain polarity III-V compound semiconductors) and Si (nonpolar