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提出了NPNM四极管概念。它由相互作用的一个NPN晶体管和一个金属-硅结构成。瞬态工作时,具有非平衡载流子存贮效应小的优点;应用于逻辑电路,可使其逻辑摆幅低;而且,一个NPNM四极管就构成一个逻辑门,因此,由NPNM构成的逻辑电路具有微功耗、高速、高集成密度的优点。本文讨论了NPNM工作原理。分析了静态和瞬态特性,给出了结构、工艺和研制结果。用普通工艺,单管存贮时间可达5毫微秒,应用于三层结构逻辑电路。已研制出四位加法器等部件。集成密度可达200-800门/mm~2。
Proposed NPNM tetrode concept. It consists of an NPN transistor and a metal-silicon structure that interact. Transient operation, has the advantages of non-equilibrium carrier storage effect is small; applied to the logic circuit, can make its logic swing is low; and, an NPNM diode to form a logic gate, therefore, by NPNM Logic has the advantages of micro-power, high speed, high integration density. This article discusses the working principle of NPNM. The static and transient characteristics were analyzed and the structure, process and development results were given. With ordinary technology, single-tube storage time up to 5 ns, used in three-tier structure of the logic circuit. Has developed four adders and other components. Integrated density up to 200-800 door / mm ~ 2.