基于金属诱导晶化方法,利用直流磁控溅射离子镀技术制备了Al-Si、Cu-Si和Ni-Si薄膜。采用真空退火炉和X射线衍射仪于不同温度下对样品进行了退火试验并分析了退火后薄膜物相结构的变化规律。结果表明,Al诱导Si薄膜晶化的效果最好,Cu次之,Ni诱导Si薄膜晶化的效果较差;Al可在退火温度为400℃时诱导Si薄膜晶化,且随退火温度的升高Si的平均晶粒尺寸增大;Cu-Si薄膜的内应力较大和Ni-Si薄膜中Ni/Si界面处难以形成NiSi是Cu、Ni诱导Si薄膜晶化效果较差的主要原因。 Based on the metal-induced crystallization method, Al-Si, Cu-Si and Ni-Si films were prepared by direct current magnetron sputtering ion plating. The samples were annealed at different temperatures in a vacuum annealing furnace and X-ray diffractometer. The changes of phase structure after annealing were analyzed. The results show that Al has the best effect on the crystallization of Si film, Cu is the second, and the effect of Ni on Si film crystallization is poor. Al can induce Si film crystallization at annealing temperature of 400 ℃, The average grain size of the high Si increases; the internal stress of the Cu-Si film is larger than that of the Ni-Si film at the interface of Ni / Si film; Ni is the main reason for the poor crystallization of the Si film.