论文部分内容阅读
采用MOD法制备了PLZT铁电薄膜.通过DTA研究了PLZT粉末和薄膜的晶化动力学.MOD法制备的PLZT材料,在420~570℃的温度范围内由非晶结构向钙钛矿结构转化,其粉体和薄膜的晶化活化能E_a分别为55kJ/mo1和70kJ/mo1,频率因子γ分别为450s~(-1)和1.4×10~4s~(-1).薄膜从非晶态向钙钦矿相的转化过程中要经过亚稳的焦绿石相的过渡,其E和γ分别为143 kJ/mo1和7.9×10~9s~(-1).经过550℃热处理得到的PlZT(8/65/35)铁电薄膜,相对介电常数为900,介电损耗为0.02(1kH2),饱和极化强度和矫顽场强分别为35.5μC/cm~2和124kV/cm.
The PLZT ferroelectric thin films were prepared by MOD method.The crystallization kinetics of PLZT powders and thin films were studied by DTA.The PLZT materials prepared by MOD method were transformed from amorphous structure to perovskite structure in the temperature range of 420-570 ℃ , The crystallization activation energies of powders and films are 55 kJ / mol and 70 kJ / mol respectively, and the frequency factors γ are 450 s -1 and 1.4 × 10 4 s -1, respectively. The metastable pyrochlore phase in the transition to calc-inganite has an E and γ of 143 kJ / mol and 7.9 × 10-9 s -1, respectively. PlZT (8 / 65/35) ferroelectric thin film, the relative dielectric constant of 900, the dielectric loss of 0.02 (1kH2), saturation polarization and coercive field strength of 35.5μC / cm ~ 2 and 124kV / cm.