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工作报告对《MOS管阈值电压的理论修正》一文的商榷…………………………………(—1)NPN超高压低频大功率晶体管制造工艺的探讨…………………………………(—5)PECVD氮化硅在半导体器件钝化工艺中的应用…………………………………(—8)石英舟HCl-H_2-Ga高温处理………(—11)银浆烧结小功率晶体管的V_(ces)失效模式及工艺改进途径…………………………(—13)LA3361锁相环调频立体声解码器的特性及应用…………………………………(—15)半导体激光器电流-电压特性导数测量技术…………………………………(—24)
Work report on the “MOS transistor threshold voltage correction” a text of the discussion ... (-1) NPN EHV low-frequency high-power transistor manufacturing process ..... .................. (-5) PECVD silicon nitride in semiconductor device passivation process ....................................... (-8) quartz boat HCl-H_2-Ga high temperature treatment ... ...... (-11) V_ (ces) failure mode of silver paste sintered low-power transistor and process improvement method .............................. (-13) LA3361 phase-locked loop FM stereo decoder characteristics and applications ... ................................... (-15) Semiconductor Laser Current-Voltage Derivative Measurement Techniques ....................................... (-24)