图形化蓝宝石衬底(PSS)技术对提高发光二极管(LED)的内量子效率和光提取效率具有重要意义。研究了一种采用柔性复合模板压印制备图形化蓝宝石衬底的技术,其工艺流程主要包括三步图形转移。首先,在蓝宝石衬底上沉积二氧化硅,并在二氧化硅膜层上旋涂压印胶,利用紫外光固化压印技术实现模板结构向压印胶层转移。再通过电感耦合等离子体刻蚀的方法将压印胶层的结构转移到二氧化硅膜层,并以二氧化硅为掩模湿法腐蚀蓝宝石衬底形成图形结构。最后,去除二氧化硅后即可获得图形化蓝宝石衬底。实验证明,在柔性复合模板纳米压印技术制备的图形化蓝宝石衬底上生长的LED,其光致发光谱的强度比无图形结构衬底上生长的LED明显增强。 Graphical sapphire substrate (PSS) technology to improve the internal quantum efficiency of light-emitting diode (LED) and light extraction efficiency is of great significance. A technique for preparing a patterned sapphire substrate by using a flexible composite template is studied. The process mainly includes three-step graphic transfer. First of all, silica is deposited on a sapphire substrate, and the pressure-sensitive adhesive is spin-coated on the silicon dioxide film, and the template structure is transferred to the pressure-sensitive adhesive layer by UV-curable imprinting technology. Then, the structure of the embossed adhesive layer is transferred to the silicon dioxide film by inductively coupled plasma etching, and the sapphire substrate is wet-etched to form a pattern structure using silicon dioxide as a mask. Finally, a patterned sapphire substrate is obtained after removal of the silica. Experiments show that the LED grown on a flexible sapphire substrate with flexible composite template nanoimprint has a higher photoluminescence (PL) intensity than the LED grown on a non-patterned substrate.