论文部分内容阅读
在传统一级温度补偿带隙基准电路的基础上,对电路进行了改进,实现二级温度补偿,该电路可以在-40~115℃范围内,达到平均低于5×10-6/℃的温度系数。整个电路采用Chartered0.35μmCMOS工艺实现,使用Hspice仿真器进行仿真。仿真结果证明此基准电压源具有很低的温度系数。
On the basis of the traditional first-level temperature compensation bandgap reference circuit, the circuit is improved to realize the second-level temperature compensation. The circuit can be within the range of -40 to 115 ° C and reach an average of less than 5 × 10 -6 / ° C Temperature Coefficient. The entire circuit using Chartered0.35μmCMOS technology, using Hspice simulator for simulation. Simulation results show that this reference has a very low temperature coefficient.